reverse recovery in 5 nsec flat SHF1101 - shf1201 series 1 amp ? 100 - 200 volts ? 5 nsec ? hyper fast recovery rectifer features: ? low forward voltage drop ? low reverse leakage current ? avalanche breakdown ? hermeticallf sealed ? solid silver leads ? for high efciencf applications ? void free glass ceramic chip construction solid state devices, inc. (ssdi) announces the fastest, most rugged rectifer diodes on the market, the SHF1101 - shf1201 series. tese diodes are more reliable than the 1n6642 while matching its reverse recovery. tey are also a smaller and faster replacement for the 1n5806. te SHF1101 - shf1201 series is the perfect combination of high performance and high reliability in a small, light - weight package. ? excellent liquid-to-liquid thermal shock performance ? available in axial & square tab versions ? tx, txv, and s-level screening available. ? replacement for 1n6638, 1n6642 and 1n5806 ? high temperature metallurgical class i bond solid state devices, inc. iso 9001:2008 and as9100:2004 rev. b (562) 404-4474 ? www.ssdi-power.com contact us today for more information about this product or any of ssdis broad range of high reliability products and services. www.datasheet.co.kr datasheet pdf - http://www..net/
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rc0160a doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number/ordering information 1 / shf1 ____ __ __ screening 2 / __ = not screened tx = tx level txv = txv level s = s level package type __ = axial leaded sms = surface mount square tab device type ( vrwm ) 101 = 100 v 151 = 150 v 201 = 200 v SHF1101 thru shf1201 series 1 amp 100 ? 200 volts 5 nsec hyper fast recovery rectifier features: ? hyper fast reverse recovery time: 5 ns max ? low forward voltage drop ? low reverse leakage current ? avalanche breakdown ? void free glass ceramic chip construction ? hermetically sealed ? solid silver leads ? excellent liquid-to-liquid thermal shock performance ? available in axial & square tab versions ? for high efficiency applications ? tx, txv, and s-level screening available 2 / ? replacement for 1n6638, 1n6642 and 1n5806 ? high temperature metallurgical class i bond maximum ratings 3 / rating symbol value unit peak repetitive reverse voltage dc blocking voltage SHF1101 shf1151 shf1201 v rwm v r 100 150 200 volts average rectified forward current (resistive load, 60 hz, sine wave, t c = 25c) i o 1 amp peak surge current (8.3 msec pulse, half sine wave superimposed on io, allow junction to reach equilibrium between pulses, t c = 25c) i fsm 20 amps operating & storage temperature t op and t stg -65 to +175 c thermal resistance sms- junction to end tab axial- junction to lead @ .375? r je r jl 20 80 c/w notes: 1 / for ordering information, price, an d availability - contact factory. 2 / screening based on mil-prf-19500. screening flows available on request. 3 / unless otherwise specified, all electrical characteristics @25c. axial leaded sms www.datasheet.co.kr datasheet pdf - http://www..net/
note: all specifications are subjec t to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: rc0160a doc electrical characteristics 3 / characteristics symbol limit unit maximum instantaneous forward voltage drop (pulsed, t a = 25c) @ i f = 1ma @ i f = 10ma @ i f = 100ma @ i f = 200ma @ i f = 500ma @ i f = 1a v f1 v f2 v f3 v f4 v f5 v f6 0.525 0.650 0.800 0.850 0.910 0.980 vdc maximum instantaneous forward voltage drop (pulsed, t a = 150c) @ i f = 10ma @ i f = 100ma v f7 v f8 0.500 0.620 vdc maximum instantaneous forward voltage drop (pulsed, t a = -55c) @ i f = 10ma @ i f = 100ma v f9 v f10 0.810 0.900 vdc minimum breakdown voltage i r = 100 a SHF1101 shf1151 shf1201 bv r 100 150 200 vdc maximum reverse leakage current (300 s pulse minimum , t a = 25c) @ v r = 20v @ v r = 75v @ v r = max rated i r1 i r2 i r3 80 120 750 na maximum reverse leakage current (300 s pulse minimum , t a = 125c) @ v r = 20v @ v r = 75v @ v r = max rated i r4 i r5 i r6 50 75 150 a maximum junction capacitance (t a = 25c , f = 1mhz) v r = 0v c j1 6 pf maximum junction capacitance (t a = 25c , f = 1mhz) v r = 1.5v c j2 5 pf maximum junction capacitance (t a = 25c , f = 1mhz) v r = 10v c j3 4 pf maximum reverse recovery time (i f = 50 ma, i r = 100 ma, i rr = 25 ma) t rr 5 nsec maximum forward recovery time (i f = 50 ma) t fr 20 nsec axial dim min max a .056? .075? b .125? .140? c .018? .022? d 1.00? 1.50? sms dim min max a .070? .085? b .168? .200? c .019? .028? d .001? -- solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com SHF1101 thru shf1201 series www.datasheet.co.kr datasheet pdf - http://www..net/
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